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SPICE MODEL: BC847AT BC857BT BC857CT
Pb
Lead-free
BC857AT, BT, CT
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features
* * * * *
Epitaxial Die Construction Complementary NPN Types Available (BC847AT, BT, CT) Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability
TOP VIEW BC E G H K M A C
SOT-523 Dim A B C D G H J K L
D L
Min 0.15 0.75 1.45 3/4 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0
Max 0.30 0.85 1.75 3/4 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8
Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 3/4
Mechanical Data
* * * * * * * * *
Case: SOT-523 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Codes (See Table Below & Diagrams on Page 2) Ordering & Date Code Information: See Page 2 Weight: 0.002 grams (approximate)
J
B
M N a
All Dimensions in mm
Type BC857AT BC857BT BC857CT
Marking 3V 3W 3G
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (Note 1)
@ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG Value -50 -45 -5.0 -100 150 833 -55 to +150 Unit V V V mA mW C/W C
Characteristic
Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead.
DS30275 Rev. 8 - 2
1 of 3 www.diodes.com
BC857AT, BT, CT
a Diodes Incorporated
Electrical Characteristics
Characteristic
@ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO Current Gain A B C hFE VCE(SAT) VBE(SAT) VBE(ON) ICBO fT COB NF Min -50 -45 -5 125 220 420 -- -- -- -600 -- -- -- 100 -- -- Typ -- -- -- -- 290 520 -- -- -700 -900 -- -- -- -- -- -- -- Max -- -- -- 250 475 800 -300 -650 -- -- -750 -820 -15 -4.0 -- 4.5 10 Unit V V V -- mV mV mV NA A MHz pF dB Test Condition IC = 10mA, IB = 0 IC = 10mA, IB = 0 IE = 1mA, IC = 0 VCE = -5.0V, IC = -2.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA VCB = -30V VCB = -30V, TA = 150C VCE = -5.0V, IC = -10mA, f = 100MHz VCB = -10V, f = 1.0MHz IC = -0.2mA, VCE = -5.0Vdc, RS = 2.0KW, f = 1.0KHz, BW = 200Hz
Collector-Base Breakdown Voltage (Note 3) Collector-Emitter Breakdown Voltage (Note 3) Emitter-Base Breakdown Voltage (Note 3) DC Current Gain (Note 3)
Collector-Emitter Saturation Voltage (Note 3) Base-Emitter Saturation Voltage (Note 3) Base-Emitter Voltage (Note 3) Collector-Cutoff Current (Note 3) Gain Bandwidth Product Output Capacitance Noise Figure
Notes:
3. Short duration pulse test used to minimize self-heating effect.
Ordering Information
Device BC857AT-7-F BC857BT-7-F BC857CT-7-F
Notes:
(Note 4) Packaging SOT-523 SOT-523 SOT-523 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
4. For Packaging Details: go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XXYM
Date Code Key Year Code 1998 J Month Code 1999 K Jan 1 2000 L 2001 M Feb 2 2002 N March 3 2003 P Apr 4
XX = Product Type Marking Code (See Page 1), e.g. 3V = BC857AT YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September)
2004 R May 5
2005 S Jun 6
2006 T Jul 7
2007 U Aug 8
2008 V Sep 9
2009 W Oct O
2010 X
2011 Y Nov N
2012 Z Dec D
DS30275 Rev. 8 - 2
2 of 3 www.diodes.com
BC857AT, BT, CT
250 PD, POWER DISSIPATION (mW)
0.5 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC IB = 10
200
0.4
150
0.3
100
0.2
TA = 25C TA = 150C
50
0.1 TA = -50C 0 0.1 1 10 100 1000
0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature
1000 TA = 150C
IC, COLLECTOR CURRENT (mA) Fig. 2 Collector Emitter Saturation Voltage vs. Collector Current
1000 ft, GAIN BANDWIDTH PRODUCT (MHz)
VCE = 5V
VCE = 5V
hFE, DC CURRENT GAIN
100
TA = 25C TA = -50C
100
10
1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs. Collector Current
10 1 10 100
IC, COLLECTOR CURRENT (mA) Fig. 4, Gain Bandwidth Product vs Collector Current
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30275 Rev. 8 - 2
3 of 3 www.diodes.com
BC857AT, BT, CT

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